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Preliminary Technical Data
FEATURES
Technology: high performance SiGe Bandwidth: 2.1GHz minimum Input noise current density: 8 pAHz Optical sensitivity: -24 dBm Differential transimpedance: 5000 V/A Power dissipation: 75 mW Differential output swing: 250 mV p-p Input current overload: +3.25 dBm Output resistance: 50 /side Low-freq cutoff: 20 kHz On-chip PD filter: RF = 200 CF = 20 pF RSSI voltage and current ratio: 0.8V/mA Die size: 0.7 mm x 1.2 mm
3.2 Gbps 3.3 V Low Noise Transimpedance Amplifier ADN2880
The ADN2880 is a compact, high performance 3.3 V power supply SiGe transimpedance amplifier (TIA) optimized for small-form-factor pluggable (SFP) optical receivers, up to 3.2 Gbps SFF/SPF optical receivers, and meets OC48 SR/IR sensitivity requirements. The ADN2880 is a single-chip solution for detecting photodiode current with a differential output voltage. The ADN2880 features low input referred noise current of 400 nA enabling -24 dBm sensitivity; 2.1 GHz minimum BW enables up to 3.2 Gbps operation; +3.25 dBm nominal operation at 10 dB extinction ratio. RSSI output signal proportional to average input current is available for monitoring and alarm generation. To facilitate assembly in small form factor packages such as a TO-46 or TO-56 header, the ADN2880 integrates the photodiode filter network on chip and features 20 kHz low frequency cutoff without any external components. The ADN2880 chip area is less than 1 mm2, operates with a 3.3 V power supply and is available in die form.
APPLICATIONS
3.2 Gbps optical modules SFF-8472 compliant receivers PIN/APD-TIA receive optical subassembly SONET/GbE/FC optical receivers, transceivers, transponders
PRODUCT DESCRIPTION
3.3V VCC_FILT ER 200 FI LT ER IN VCC 50 50 OU T OU T B
1400 1100
20pF 0.85V 5mA
RSSI
GN D
GN D
CAP
Figure 1. ADN2880 Block Diagram
Rev. PrC
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 (c) 2004 Analog Devices, Inc. All rights reserved.
ADN2880 TABLE OF CONTENTS
Electrical Specifications ................................................................... 3 Absolute Maximum Ratings............................................................ 4 ESD Caution.................................................................................. 4 Pad Descriptions............................................................................... 5
Preliminary Technical Data
Pad Layout ..........................................................................................6 Pad Coordinates ............................................................................6 Die Information.............................................................................6 Assembly Recommendations...........................................................7
REVISION HISTORY
07/04--Revision PrB 11/04 - Revision C - RSSI added.
Rev. PrC | Page 2 of 9
Preliminary Technical Data ELECTRICAL SPECIFICATIONS
Table 1.
Parameter DYNAMIC PERFORMANCE Bandwidth (BW)2 Total Input RMS Noise (IRMS)2 Small Signal Transimpedance (ZT) Low Frequency Cutoff Output Return Loss2 Input Overload Current3 Maximum Output Swing Output Data Transition Time PSRR Group Delay Variation Transimpedance Ripple Total Jitter2 Deterministic Jitter2 DC PERFORMANCE Power Dissipation Input Voltage Output Common-Mode Voltage Output Impedance PD FILTER Resistance PD FILTER Capacitance Conditions1 -3 dB DC to 3.2 GHz 100 MHz CAP = Open CAP = 1nF DC to 3.2 GHz, differential Pavg pk-pk diff, IIN,PK- PK = 2.0 mA 20% to 80% rise/fall time IIN,PK- PK = 2.5 mA < 10 MHz 50 MHz to 3.2 GHz 50 MHz to 3.2 GHz 10 A < IIN,PK- PK 100 A 100 A < IIN,PK- PK 2.0 A 10 A < IIN,PK- PK 100 A 100 A < IIN,PK- PK 2.0 A IIN,AVE = 0 mA DC terminated to Vcc Single-ended RF CF Min 2.1 4000 Typ 2.3 375 5000 20 2 -20 3.25 250 55 -35 TBD TBD TBD TBD 4 8 75 0.85 Vcc - 0.12 50 200 20 Max
ADN2880
Unit GHz nA V/A kHz kHz dB dBm mV ps dB ps dB ps ps ps ps mW V V pF
400 6000
-12 350
TBD 180
TBD TBD
50
120
RSSI Sensitivity
IIN, AVE = 0 uA to 1 mA
0.8
V/mA
RSSI Offset
IIN, AVE = 0 uA
TBD
mV
1 2
Min/Max Vcc = +3.3V 0.3V, Tambient = -40 C to +95C; Typ Vcc=3.3V, Tambient = +25C Photodiode capacitance CD = 0.7 pF 0.15 pF, photodiode resistance = 5 input wire bond inductance LIN = 0.3nH 0.1nH, Output bond wire inductance LOUT,OUTB = 0.8nH 0.1nH Load impedance = 50 (each output, ac-coupled) 3 10-10 BER, 10dB ER, 0.85 A/W PIN responsivity
Rev. PrC | Page 3 of 9
ADN2880 ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameters Supply Voltage (Vcc to GND) Internal Power Dissipation Output Short Circuit Duration Maximum Input Current Storage Temperature Range Operating Ambient Temperature Range Maximum Junction Temperature Die Attach Temperature (<60 seconds) Ratings 5V TBD 10 mA -65C to +125C -40C to +95C 165C 450C
Preliminary Technical Data
Stresses above those listed under `Absolute Maximum Rating' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. PrC | Page 4 of 9
Preliminary Technical Data PAD DESCRIPTIONS
ADN2880
B FI LT ER
RSSI
Table 3.
PAD # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PAD GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC FUNCTION Ground (input return). Current Input. Bond directly to PD anode. Test Probe Pad. Leave Floating. Filter Output. Filter Output Ground. Voltage Output (provides average input current reading) Low Frequency Setpoint. Connect with 1 nF capacitance to GND for < 30 kHz. Ground. Ground (output return). Negative Output. Drives 50 ohm termination (ac or dc termination). Positive Output. Drives 50 ohm termination (ac or dc termination). Ground (output return). Ground Filter Supply. Connect to Vcc to enable on-chip 200 *20 pf filter. 3.3 V Positive Supply. Recommended bypass to GND is 100 pF RF capacitor. 3.3 V Positive Supply. Recommended bypass to GND is 100 pF RF capacitor.
Rev. PrC | Page 5 of 9
ADN2880 PAD LAYOUT
Preliminary Technical Data
B FI LT ER
RSSI
Figure 2.. Pad Layout
PAD COORDINATES
Table 4.
PAD # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PAD GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC X (um) -500 -500 -500 -500 -500 -350 -200 -50 130 500 350 350 500 130 -50 -200 -350 Y (um) 260 130 10 -120 -260 -260 -260 -260 -260 -260 -60 60 260 260 260 260 260
DIE INFORMATION
Die Size
0.7mm x 1.2mm (edge-edge including 1mil scribe)
Die Thickness
10mils = 0.25mm
Passivation Openings
0.075 mm x 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm x 0.075mm (pads 9, 11, 12, 14)
Passivation Composition
5000A Si3N4 (top) +5000 A SiO2 (bot)
Pad Composition
Al/1%Cu
Backside Contact
Rev. PrC | Page 6 of 9
Preliminary Technical Data ASSEMBLY RECOMMENDATIONS
ADN2880
VPD
VCC
560pF 1000pF 200pF
OUTB
OUT
Figure 3. 5-Pin TO-46 with External Photodiode Supply VPD Connected through FILTER Pin
1x Vendor Specific (0.3 mm x 0.3 mm) 2.5 Gbps Photo Diode 1x ADN2880 (0.7mm x 1.2 mm) Analog Devices SiGe 3.2 Gbps Transimpedance Amplifier 1x 200 pF RF Single-Layer Capacitor 1x 560 pF RF Single Layer Capacitor 1x 1000pF Ceramic Capacitor
Notes Minimize all GND bond wire lengths Minimize IN, OUT and OUTB bond wire lengths Maintain symmetry in length and orientation between OUT and OUTB bond wires Maintain symmetry between IN and OUT/OUTB bond wires
Rev. PrC | Page 7 of 9
ADN2880
VCC
Preliminary Technical Data
200pF
OUTB
Ceramic Standoff
OUT
Figure 4. Recommended Layout of 4-Pin TO-46
1x Vendor Specific (0.3 mm x 0.3 mm) 2.5 Gbps Photo Diode 1x ADN2880 (0.7mm x 1.2 mm) Analog Devices SiGe 3.2 Gbps Transimpedance Amplifier 1x 200 pF RF Single-Layer Capacitor 1x Ceramic Standoff 1x 1000pF Ceramic Capacitor
Notes Minimize all GND bond wire lengths Minimize IN, OUT and OUTB bond wire lengths Maintain symmetry in length and orientation between OUT and OUTB bond wires Maintain symmetry between IN and OUT/OUTB bond wires
Rev. PrC | Page 8 of 9
Preliminary Technical Data ORDERING GUIDE
Model ADN2880XCHIPS-WP Temperature -40oC to 95oC Package Description NA Package Option Tested Die
ADN2880
(c) 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective companies. PR04945-0-11/04(PrC)
Rev. PrC | Page 9 of 9
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